Stmicroelectronics
STI400N4F6
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STI400N4F6 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 20nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI400N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STI400N4F6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.