
N-CHANNEL Power MOSFET featuring 30V Drain-Source Breakdown Voltage and 20A Continuous Drain Current. Offers a low 7.8mΩ maximum Drain-Source On-Resistance. Designed for surface mount applications with a 150°C maximum operating temperature and 5.2W power dissipation. Includes 15ns fall time and 45ns turn-off delay time.
Stmicroelectronics STK800 technical specifications.
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