
N-CHANNEL Power MOSFET featuring 30V Drain-Source Breakdown Voltage and 20A Continuous Drain Current. Offers a low 7.8mΩ maximum Drain-Source On-Resistance. Designed for surface mount applications with a 150°C maximum operating temperature and 5.2W power dissipation. Includes 15ns fall time and 45ns turn-off delay time.
Stmicroelectronics STK800 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.8mR |
| Dual Supply Voltage | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.38nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.2W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Rds On Max | 7.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STK800 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
