N-Channel Power MOSFET featuring 30A continuous drain current and 30V drain-to-source breakdown voltage. Offers a low 2.9mΩ maximum drain-source on-resistance at a nominal 2.5V Vgs. Designed for surface mount applications with a 5.2W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes a 13ns fall time and 31ns turn-off delay time, with 3.15nF input capacitance.
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
Power5.2W
Quick Jump:
Technical Specifications
Stmicroelectronics STK850 technical specifications.
General
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.9mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.9mR
Dual Supply Voltage
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
3.15nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.2W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5.2W
Rds On Max
2.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Turn-Off Delay Time
31ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STK850 Datasheet
Download the complete datasheet for Stmicroelectronics STK850 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
