N-channel MOSFET featuring 12V drain-source breakdown voltage and a maximum continuous drain current of 100A. Offers a low drain-source on-resistance of 2.2mΩ at 25A, with a maximum specified at 3mΩ. Designed for surface mounting with a compact 5.2mm x 6.15mm x 0.95mm package, this component boasts a maximum power dissipation of 60W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 16ns and turn-on delay of 14.4ns.
Stmicroelectronics STL100N1VH5 technical specifications.
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