N-channel MOSFET featuring 12V drain-source breakdown voltage and a maximum continuous drain current of 100A. Offers a low drain-source on-resistance of 2.2mΩ at 25A, with a maximum specified at 3mΩ. Designed for surface mounting with a compact 5.2mm x 6.15mm x 0.95mm package, this component boasts a maximum power dissipation of 60W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 16ns and turn-on delay of 14.4ns.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL100N1VH5 technical specifications.
General
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
2.2mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
3MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
8V
Height
0.95mm
Input Capacitance
2.085nF
Lead Free
Lead Free
Length
5.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ V
Threshold Voltage
500mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
14.4ns
Width
6.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL100N1VH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL100N1VH5 to view detailed technical specifications.
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