N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers low 19mΩ drain-source on-resistance at a nominal 1V gate-source voltage. Designed for surface mount applications with a PowerFLAT™ 3.3x3.3 package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 50W. Includes fast switching characteristics with turn-on delay time of 4ns and fall time of 3.5ns.
MountingSurface Mount
PolarityN-CHANNEL
Power50W
Quick Jump:
Technical Specifications
Stmicroelectronics STL10N3LLH5 technical specifications.
General
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11.7R
Fall Time
3.5ns
Gate to Source Voltage (Vgs)
22V
Input Capacitance
900pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
19mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ V
Threshold Voltage
1V
Turn-Off Delay Time
21ns
Turn-On Delay Time
4ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL10N3LLH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL10N3LLH5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
