
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers low 19mΩ drain-source on-resistance at a nominal 1V gate-source voltage. Designed for surface mount applications with a PowerFLAT™ 3.3x3.3 package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 50W. Includes fast switching characteristics with turn-on delay time of 4ns and fall time of 3.5ns.
Stmicroelectronics STL10N3LLH5 technical specifications.
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.7R |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 4ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL10N3LLH5 to view detailed technical specifications.
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