The STL11N3LLH6 is an N-channel MOSFET with a breakdown voltage of 30V and a continuous drain current of 11A. It features a drain to source resistance of 6mR and a gate to source voltage of 20V. The device is designed for surface mount applications and has a maximum operating temperature of 150°C. It is lead free and RoHS compliant, making it suitable for use in a variety of electronic devices.
MountingSurface Mount
PolarityN-CHANNEL
Power50W
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Technical Specifications
Stmicroelectronics STL11N3LLH6 technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.69nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL11N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STL11N3LLH6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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