N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3mΩ maximum drain-source on-resistance and 80W maximum power dissipation. Designed for surface mount applications with a compact 4.75mm x 5.75mm x 0.88mm package. Includes fast switching characteristics with turn-on delay of 21ns and fall time of 55ns. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STL120N2VH5 technical specifications.
General
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
3MR
Fall Time
55ns
Gate to Source Voltage (Vgs)
8V
Height
0.88mm
Input Capacitance
4.66nF
Lead Free
Lead Free
Length
4.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ V
Threshold Voltage
700mV
Turn-Off Delay Time
76ns
Turn-On Delay Time
21ns
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL120N2VH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL120N2VH5 to view detailed technical specifications.
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