
N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3mΩ maximum drain-source on-resistance and 80W maximum power dissipation. Designed for surface mount applications with a compact 4.75mm x 5.75mm x 0.88mm package. Includes fast switching characteristics with turn-on delay of 21ns and fall time of 55ns. Operates across a wide temperature range from -55°C to 150°C.
Stmicroelectronics STL120N2VH5 technical specifications.
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