Dual N-channel Power MOSFET featuring 40V drain-source breakdown voltage and 9mΩ maximum drain-source on-resistance. This automotive-grade component offers a continuous drain current of 60A and a maximum power dissipation of 60W. Designed for surface mounting in a PowerFLAT 5x6 double island package, it boasts fast switching speeds with a 18ns turn-on delay and 32ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant MOSFET is suitable for demanding automotive applications.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL15DN4F5 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 9MR |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 1.55nF |
| Lead Free | Lead Free |
| Length | 4.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, STripFET™ V |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 18ns |
| Width | 5.75mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL15DN4F5 Datasheet
Download the complete datasheet for Stmicroelectronics STL15DN4F5 to view detailed technical specifications.
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