N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 299mΩ drain-source on-resistance. Designed for surface mounting in an 8x8mm package with a height of 0.95mm. Includes fast switching characteristics with 6ns fall time and 25ns turn-on/off delay times. RoHS compliant and operates within a -55°C to 150°C temperature range.
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STL16N65M5 technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
299mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
299MR
Fall Time
6ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
299mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
25ns
Turn-On Delay Time
25ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL16N65M5 to view detailed technical specifications.
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