
N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 299mΩ drain-source on-resistance. Designed for surface mounting in an 8x8mm package with a height of 0.95mm. Includes fast switching characteristics with 6ns fall time and 25ns turn-on/off delay times. RoHS compliant and operates within a -55°C to 150°C temperature range.
Stmicroelectronics STL16N65M5 technical specifications.
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