
N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 17A continuous drain current. Offers a low 4.5mΩ maximum drain-source on-resistance. Designed for surface mounting with a 3.3 x 3.3 mm footprint, this component boasts a 50W maximum power dissipation and operates across a -55°C to 150°C temperature range. Includes fast switching characteristics with a 9.5ns turn-on delay and 12ns fall time.
Stmicroelectronics STL17N3LLH6 technical specifications.
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.5MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.69nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 9.5ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL17N3LLH6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
