N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 17A continuous drain current. Offers a low 4.5mΩ maximum drain-source on-resistance. Designed for surface mounting with a 3.3 x 3.3 mm footprint, this component boasts a 50W maximum power dissipation and operates across a -55°C to 150°C temperature range. Includes fast switching characteristics with a 9.5ns turn-on delay and 12ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power50W
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Technical Specifications
Stmicroelectronics STL17N3LLH6 technical specifications.
General
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.5MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.69nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
1V
Turn-Off Delay Time
37ns
Turn-On Delay Time
9.5ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL17N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STL17N3LLH6 to view detailed technical specifications.
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