The STL18N55M5 is a high-power N-channel MOSFET from Stmicroelectronics with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 550V and a continuous drain current of 13A. The device has a low on-resistance of 270mR and a fast switching time with a fall time of 13ns. The STL18N55M5 is packaged in a RoHS compliant PowerFLAT-4 package and is suitable for surface mount applications. It is compliant with lead-free requirements and has a maximum power dissipation of 3W.
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Stmicroelectronics STL18N55M5 technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 270MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.352nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL18N55M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL18N55M5 to view detailed technical specifications.
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