N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a low 240mΩ maximum drain-source on-resistance. Designed for surface mounting in a 5x6 HV PowerFLAT package, this component boasts fast switching speeds with a 9ns turn-off delay and 11ns fall time. Operating across a wide temperature range from -55°C to 150°C, it supports up to 57W power dissipation and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power57W
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Technical Specifications
Stmicroelectronics STL18N65M5 technical specifications.
General
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
240mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
25V
Height
1mm
Input Capacitance
1.24nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Surface Mount
Number of Channels
2
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
57W
Radiation Hardening
No
Rds On Max
240mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
9ns
Turn-On Delay Time
36ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL18N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL18N65M5 to view detailed technical specifications.
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