The STL19N65M5 is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 12.5A and a maximum power dissipation of 2.8W. The device is packaged in a small outline S-PSSO-N4 package and is lead-free and RoHS compliant. The STL19N65M5 is suitable for high-power applications requiring a high drain-to-source breakdown voltage of 650V.
Resistance0.215R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL19N65M5 technical specifications.
General
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Breakdown Voltage | 710V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 240mR |
| Resistance | 0.215R |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 36ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL19N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL19N65M5 to view detailed technical specifications.
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