Stmicroelectronics
STL20DN10F7
Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island
Resistance0.065R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL20DN10F7 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 67mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 408pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 67mR |
| Resistance | 0.065R |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL20DN10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL20DN10F7 to view detailed technical specifications.
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