N-channel MOSFET, designed for small signal and power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 20A. Offers a low 105mΩ Rds(on) and 80W power dissipation. Operates with a gate-to-source voltage up to 30V and includes fast switching times with turn-on/off delays of 40ns. Packaged in a compact 6x5mm chip scale PowerFLAT-8 surface-mount package, suitable for tape and reel.
Current Rating20A
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STL20NM20N technical specifications.
General
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
200V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Height
0.81mm
Input Capacitance
800pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Rds On Max
105mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
40ns
Turn-On Delay Time
40ns
DC Rated Voltage
200V
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL20NM20N Datasheet
Download the complete datasheet for Stmicroelectronics STL20NM20N to view detailed technical specifications.
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