
N-channel MOSFET, designed for small signal and power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 20A. Offers a low 105mΩ Rds(on) and 80W power dissipation. Operates with a gate-to-source voltage up to 30V and includes fast switching times with turn-on/off delays of 40ns. Packaged in a compact 6x5mm chip scale PowerFLAT-8 surface-mount package, suitable for tape and reel.
Stmicroelectronics STL20NM20N technical specifications.
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.81mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Rds On Max | 105mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 200V |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL20NM20N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
