
N-channel Power MOSFET featuring 100V drain-to-source breakdown voltage and 30A continuous drain current. Offers a low 0.027 Ohm typical drain-to-source resistance, with a maximum of 35mR. Operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 75W. This surface-mount device is housed in a 5x6 PowerFLAT package, measuring 6.35mm x 5.4mm x 0.95mm. Designed with DeepGATE™ and STripFET™ VII series technology, it exhibits fast switching characteristics with turn-on delay time of 9.8ns and fall time of 4.6ns. RoHS compliant and lead-free.
Stmicroelectronics STL30N10F7 technical specifications.
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