N-channel Power MOSFET featuring 100V drain-to-source breakdown voltage and 30A continuous drain current. Offers a low 0.027 Ohm typical drain-to-source resistance, with a maximum of 35mR. Operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 75W. This surface-mount device is housed in a 5x6 PowerFLAT package, measuring 6.35mm x 5.4mm x 0.95mm. Designed with DeepGATE™ and STripFET™ VII series technology, it exhibits fast switching characteristics with turn-on delay time of 9.8ns and fall time of 4.6ns. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL30N10F7 technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
100V
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
920pF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
35mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
14.8ns
Turn-On Delay Time
9.8ns
Width
5.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL30N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL30N10F7 to view detailed technical specifications.
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