Dual N-channel MOSFET featuring 30V drain-source breakdown voltage and 16mΩ typical drain-source on-resistance. This automotive-grade power MOSFET offers a continuous drain current of 40A and a maximum power dissipation of 60W. Designed for surface mounting in a PowerFLAT 5x6 double island package, it boasts fast switching characteristics with a 4ns turn-on delay and 2.8ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL40DN3LLH5 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
18MR
Fall Time
2.8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
22V
Height
0.85mm
Input Capacitance
475pF
Lead Free
Lead Free
Length
4.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ V
Threshold Voltage
1.5V
Turn-Off Delay Time
13ns
Turn-On Delay Time
4ns
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL40DN3LLH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL40DN3LLH5 to view detailed technical specifications.
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