N-channel Power MOSFET featuring 100V drain-source breakdown voltage and a low 24mΩ typical drain-source on-resistance. This device offers a continuous drain current of 40A and a maximum power dissipation of 70W. Designed for surface mounting in a PowerFLAT 5x6 package, it boasts fast switching characteristics with turn-on delay time of 12ns and fall time of 5.6ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is ideal for high-efficiency power applications.
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STL40N10F7 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
24mR
Fall Time
5.6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.27nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
24mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
22ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL40N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL40N10F7 to view detailed technical specifications.
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