N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. Offers a low 2.1 Ohm typical drain-source resistance and 38W maximum power dissipation. Designed for surface mount applications in a 5x6 VHV package, this component boasts fast switching characteristics with fall time of 21ns and turn-on delay of 16.5ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power38W
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Technical Specifications
Stmicroelectronics STL4N80K5 technical specifications.
General
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
800V
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
0.95mm
Input Capacitance
175pF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
2.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
36ns
Turn-On Delay Time
16.5ns
Width
5.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL4N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STL4N80K5 to view detailed technical specifications.
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