N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. Offers a low 2.1 Ohm typical drain-source resistance and 38W maximum power dissipation. Designed for surface mount applications in a 5x6 VHV package, this component boasts fast switching characteristics with fall time of 21ns and turn-on delay of 16.5ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power38W
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Technical Specifications
Stmicroelectronics STL4N80K5 technical specifications.
General
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.95mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16.5ns |
| Width | 5.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL4N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STL4N80K5 to view detailed technical specifications.
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