N-channel power MOSFET featuring 100V drain-source breakdown voltage and low 18mΩ maximum drain-source on-resistance. This device offers a continuous drain current of 46A and a maximum power dissipation of 5W, operating across a wide temperature range of -55°C to 175°C. Designed for surface mounting in a 5.4mm x 6.35mm x 0.95mm PowerFLAT package, it boasts fast switching characteristics with a typical fall time of 8ns and turn-on delay of 15.2ns. The component is RoHS compliant and lead-free, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL60N10F7 technical specifications.
General
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.64nF |
| Lead Free | Lead Free |
| Length | 5.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 15.2ns |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL60N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL60N10F7 to view detailed technical specifications.
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