N-channel power MOSFET featuring 100V drain-source breakdown voltage and low 18mΩ maximum drain-source on-resistance. This device offers a continuous drain current of 46A and a maximum power dissipation of 5W, operating across a wide temperature range of -55°C to 175°C. Designed for surface mounting in a 5.4mm x 6.35mm x 0.95mm PowerFLAT package, it boasts fast switching characteristics with a typical fall time of 8ns and turn-on delay of 15.2ns. The component is RoHS compliant and lead-free, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STL60N10F7 technical specifications.
General
Continuous Drain Current (ID)
46A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
16.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
18mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
1.64nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
18mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
24ns
Turn-On Delay Time
15.2ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL60N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL60N10F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
