N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 6.3mΩ low on-resistance. This surface-mount device offers a continuous drain current of 60A and a maximum power dissipation of 60W. Designed for efficient switching, it exhibits a typical fall time of 6ns and turn-on delay of 8.6ns. The component operates across a wide temperature range from -55°C to 150°C and is packaged in tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL60N3LLH5 technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
7.1MR
Fall Time
6ns
Gate to Source Voltage (Vgs)
22V
Height
0.81mm
Input Capacitance
1.29nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
7.1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ V
Threshold Voltage
1V
Turn-Off Delay Time
32.4ns
Turn-On Delay Time
8.6ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL60N3LLH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL60N3LLH5 to view detailed technical specifications.
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