NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 1A. Maximum power dissipation is 1000mW. This single-element transistor is housed in a 3-pin TO-92 plastic package with formed leads, designed for through-hole mounting. Operating temperature range spans from -65°C to 150°C.
Stmicroelectronics STL72-AP technical specifications.
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