N-channel Power MOSFET, surface mount, featuring 30V drain-source voltage and 80A continuous drain current. This single element device operates in enhancement mode with a maximum drain-source on-resistance of 5.2 mOhm at 10V. Housed in an 8-pin Power Flat package with no leads, it measures 5mm x 6mm x 0.81mm. Key electrical characteristics include a typical gate charge of 17 nC at 4.5V and input capacitance of 1690 pF at 25V. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 150°C.
PackagePower Flat
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STL80N3LLH6 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
Power Flat
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
0.81
Seated Plane Height (mm)
0.83
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
80A
Maximum Drain Source Resistance
5.2@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1690@25VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STL80N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STL80N3LLH6 to view detailed technical specifications.
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