Stmicroelectronics
STL8DN10LF3
Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STL8DN10LF3 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
100V
Fall Time
5.2ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
970pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
35mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, STripFET™ III
Turn-Off Delay Time
50.6ns
Turn-On Delay Time
8.7ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL8DN10LF3 Datasheet
Download the complete datasheet for Stmicroelectronics STL8DN10LF3 to view detailed technical specifications.
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