N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 4.5A continuous drain current. Offers a typical 0.8 Ohm drain-source resistance, with a maximum of 950mR. Designed for surface mounting in a 5x6 VHV PowerFLAT package, this component boasts fast switching characteristics with turn-on delay of 12ns and fall time of 20ns. Maximum power dissipation is 42W, operating from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL8N80K5 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.95mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 5.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 12ns |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL8N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STL8N80K5 to view detailed technical specifications.
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