NPN Bipolar Junction Transistor (BJT) for power applications. Features a 400V collector-emitter voltage and 4A continuous collector current. Packaged in a surface-mount DPAK (TO-252AA) with a 3-pin configuration and gull-wing leads. Offers maximum power dissipation of 20W and operates across a wide temperature range from -65°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STLD128DN technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Emitter Base Voltage
9V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
4A
Maximum Power Dissipation
20000mW
Minimum DC Current Gain
8@2A@5V|10@10mA@5V
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STLD128DN Datasheet
Download the complete datasheet for Stmicroelectronics STLD128DN to view detailed technical specifications.
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