N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 1A continuous drain current, and 8.5 Ohm maximum drain-source on-resistance. Features a SOT-223 surface mount package, 3.3W power dissipation, and operates within a -55°C to 150°C temperature range. Includes 6.5ns turn-on delay and 19ns turn-off delay. RoHS compliant and lead-free.
PackageSOT-223
Current Rating400mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STN1HNK60 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
400mA
Current Rating
400mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
8.5R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
8.5R
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
1.8mm
Input Capacitance
156pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.3W
Radiation Hardening
No
Rds On Max
8.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3V
Turn-Off Delay Time
19ns
Turn-On Delay Time
6.5ns
DC Rated Voltage
600V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN1HNK60 Datasheet
Download the complete datasheet for Stmicroelectronics STN1HNK60 to view detailed technical specifications.
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