N-Channel Power MOSFET featuring 200V Drain to Source Breakdown Voltage and 1A Continuous Drain Current. Offers 1.5 Ohm On-State Resistance (Rds On Max) and 2.9W Max Power Dissipation. Designed for surface mount applications in a SOT-223 package, this RoHS compliant component boasts a 3V Threshold Voltage and fast switching times with a 6ns Turn-On Delay and 5ns Fall Time. Operating temperature range spans from -55°C to 150°C.
PackageSOT-223
Voltage200V
Current1A
Current Rating1A
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Technical Specifications
Stmicroelectronics STN1N20 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1A
Current
1A
Current Rating
1A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
200V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
206pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.9W
Mount
Surface Mount
Nominal Vgs
3V
On-State Resistance
1.5R
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.9W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MESH OVERLAY™
Threshold Voltage
3V
Turn-On Delay Time
6ns
Voltage
200V
DC Rated Voltage
200V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN1N20 Datasheet
Download the complete datasheet for Stmicroelectronics STN1N20 to view detailed technical specifications.
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