N-Channel Power MOSFET, SOT-223 package, featuring 100V drain-source breakdown voltage and 1A continuous drain current. Offers 800mΩ drain-source resistance (Rds On Max) and 2.5W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with a threshold voltage of 3V. Includes fast switching characteristics with turn-on delay of 4ns and fall time of 6.5ns. Surface mountable and RoHS compliant.
PackageSOT-223
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STN1NF10 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
100V
Fall Time
6.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
105pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
800mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
13ns
Turn-On Delay Time
4ns
DC Rated Voltage
100V
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN1NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STN1NF10 to view detailed technical specifications.
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