N-channel SuperMESH™ Power MOSFET with 600V drain-source breakdown voltage and 15 Ohm maximum drain-source on-resistance. Features 300mA continuous drain current and 3.3W maximum power dissipation. This surface-mount device in a SOT-223 package offers fast switching with turn-on delay of 5.5ns and fall time of 18ns. Operating temperature range is -55°C to 150°C.
PackageSOT-223
Current Rating250mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STN1NK60Z technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
300mA
Current Rating
250mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
15R
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
1.8mm
Input Capacitance
94pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.3W
Radiation Hardening
No
Rds On Max
15R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
13ns
Turn-On Delay Time
5.5ns
DC Rated Voltage
600V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN1NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STN1NK60Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
