P-Channel Power MOSFET, SOT-223 package, featuring a -60V Drain to Source Breakdown Voltage and 2.5A Continuous Drain Current. Offers a low Drain-source On Resistance of 220mR (max) and 200mR (typ). Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 4V. This surface mount device boasts fast switching times with a 17ns fall time and 20ns turn-on delay, dissipating up to 2.5W. RoHS compliant and lead-free.
Stmicroelectronics STN3PF06 technical specifications.
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