P-Channel Power MOSFET, SOT-223 package, featuring a -60V Drain to Source Breakdown Voltage and 2.5A Continuous Drain Current. Offers a low Drain-source On Resistance of 220mR (max) and 200mR (typ). Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 4V. This surface mount device boasts fast switching times with a 17ns fall time and 20ns turn-on delay, dissipating up to 2.5W. RoHS compliant and lead-free.
PackageSOT-223
Current Rating-2.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STN3PF06 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.5A
Current Rating
-2.5A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
220mR
Dual Supply Voltage
60V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
220mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
-60V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN3PF06 Datasheet
Download the complete datasheet for Stmicroelectronics STN3PF06 to view detailed technical specifications.
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