N-channel power MOSFET featuring 200V drain-source breakdown voltage and 1A continuous drain current. Offers a low 1.1 Ohm typical drain-source on-resistance. Packaged in a surface-mount SOT-223, this component operates within a -55°C to 150°C temperature range and boasts a 3.3W power dissipation. Includes 150pF input capacitance and a 2V threshold voltage.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
Stmicroelectronics STN4NF20L technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 10.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STN4NF20L Datasheet
Download the complete datasheet for Stmicroelectronics STN4NF20L to view detailed technical specifications.
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