NPN silicon bipolar junction transistor designed for power applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Operates with a transition frequency of 100MHz and offers a minimum DC current gain (hFE) of 100. Packaged in a SOT-223 surface-mount case, this RoHS compliant component is suitable for demanding electronic circuits.
Stmicroelectronics STN690A technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.6W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STN690A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.