NPN silicon bipolar junction transistor (BJT) for power applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 1.6W and a transition frequency of 50MHz. Packaged in a SOT-223 surface-mount case, this lead-free component operates within a temperature range of -65°C to 150°C.
Frequency50MHz
PackageSOT-223
Current Rating1.5A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STN715 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.8mm
hFE Min
140
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
80V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN715 Datasheet
Download the complete datasheet for Stmicroelectronics STN715 to view detailed technical specifications.
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