NPN bipolar junction transistor (BJT) for medium power applications, featuring a 3A maximum collector current and 30V collector-emitter breakdown voltage. This surface mount device, housed in a SOT-223 package, offers a 100MHz transition frequency and a minimum hFE of 30. Operating across a temperature range of -65°C to 150°C, it supports a maximum power dissipation of 1.6W and is RoHS compliant.
Stmicroelectronics STN724 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.1V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STN724 to view detailed technical specifications.
No datasheet is available for this part.