NPN bipolar junction transistor (BJT) for medium power applications, featuring a 3A maximum collector current and 30V collector-emitter breakdown voltage. This surface mount device, housed in a SOT-223 package, offers a 100MHz transition frequency and a minimum hFE of 30. Operating across a temperature range of -65°C to 150°C, it supports a maximum power dissipation of 1.6W and is RoHS compliant.
Frequency100MHz
PackageSOT-223
Current Rating3A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STN724 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1.1V
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
30
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.6W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN724 Datasheet
Download the complete datasheet for Stmicroelectronics STN724 to view detailed technical specifications.
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