PNP Bipolar Junction Transistor (BJT) for medium current, high performance, low voltage applications. Features a 30V Collector-Emitter Breakdown Voltage and 3A continuous collector current. Operates with a 100MHz transition frequency and a minimum hFE of 100. Packaged in a SOT-223 surface mount case, this RoHS compliant transistor offers a wide operating temperature range from -65°C to 150°C.
Frequency100MHz
PackageSOT-223
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STN790A technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
900mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
700mV
Continuous Drain Current (ID)
3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.8mm
hFE Min
100
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
30V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-60V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN790A Datasheet
Download the complete datasheet for Stmicroelectronics STN790A to view detailed technical specifications.
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