PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a 30V collector-emitter breakdown voltage and a continuous collector current of 5A. Offers a maximum power dissipation of 1.6W and operates within a temperature range of -65°C to 150°C. Packaged in a SOT-223 surface-mount plastic package, this RoHS compliant component is supplied on tape and reel.
PackageSOT-223
MountingSurface Mount
PolarityPNP
Power1.6W
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Technical Specifications
Stmicroelectronics STN888 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1.2V
Continuous Collector Current
5A
Emitter Base Voltage (VEBO)
6V
Height
1.8mm
hFE Min
120
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
30V
Max Collector Current
5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.6W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN888 Datasheet
Download the complete datasheet for Stmicroelectronics STN888 to view detailed technical specifications.
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