PNP Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V Collector Emitter Breakdown Voltage (VCEO) and a 5A Max Collector Current. Operates with a 130MHz Transition Frequency and a 500mV Collector Emitter Saturation Voltage. Packaged in a SOT-223 surface mount case, this RoHS compliant component offers a minimum hFE of 150 and a maximum power dissipation of 1.6W.
Frequency130MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics STN951 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.8mm
hFE Min
150
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
130MHz
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN951 Datasheet
Download the complete datasheet for Stmicroelectronics STN951 to view detailed technical specifications.
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