N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This TO-220 package component offers a low 6.8mΩ typical drain-source on-resistance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports up to 150W power dissipation. Key switching characteristics include a 16ns fall time and 27ns turn-on delay time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP100N10F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6.8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
4.39nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
StripFET™ VII, DeepGATE™
Threshold Voltage
4.5V
Turn-Off Delay Time
46ns
Turn-On Delay Time
27ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP100N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP100N10F7 to view detailed technical specifications.
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