N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. Offers a low 0.55 Ohm typical drain-source on-resistance, with a maximum of 600mR. Designed for through-hole mounting in a TO-220 package, this component operates from -55°C to 150°C with a maximum power dissipation of 85W. Key switching characteristics include an 8.8ns turn-on delay and a 13.2ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP10N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
600mR
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
32.5ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP10N60M2 to view detailed technical specifications.
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