N-channel power MOSFET featuring 620V drain-source voltage and 8.4A continuous drain current. Offers a low 0.75 ohm drain-source on-resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component boasts fast switching times with a 14.5ns turn-on delay and 31ns fall time. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP10N62K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8.4A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
680mR
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
680mR
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
3.75V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
41ns
Turn-On Delay Time
14.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP10N62K3 to view detailed technical specifications.
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