The STP10NK50Z is a 500V N-channel MOSFET with a continuous drain current of 9A and a maximum power dissipation of 125W. It features a TO-220AB package and is suitable for through-hole mounting. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The STP10NK50Z is part of the SuperMESH series and offers a drain to source resistance of 550mR and a turn-off delay time of 43ns.
PackageTO-220AB
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP10NK50Z technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.219nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 43ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP10NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP10NK50Z to view detailed technical specifications.
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