N-channel SuperMESH Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 0.65 Ohm typical drain-source on-resistance and 115W maximum power dissipation. This Zener-protected MOSFET is housed in a TO-220 package with through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with a 30ns fall time. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
PackageTO-220
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP10NK60Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
750mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
1.37nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
115W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
55ns
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP10NK60Z to view detailed technical specifications.
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