N-Channel Power MOSFET featuring 700V drain-source breakdown voltage and 8.6A continuous drain current. This component offers a low 850mΩ drain-to-source resistance (Rds On Max) and 150W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 19ns fall time and 22ns turn-on delay time.
PackageTO-220
Current Rating8.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP10NK70Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8.6A |
| Current Rating | 8.6A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 850mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 700V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP10NK70Z Datasheet
Download the complete datasheet for Stmicroelectronics STP10NK70Z to view detailed technical specifications.
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