N-channel power MOSFET featuring 600V drain-source voltage and 8A continuous drain current. Offers low on-resistance with a maximum of 470mΩ at 10Vgs. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 70W and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 9.2ns turn-on delay and 9.8ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP10NM60ND technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
470mR
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
577pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™ II
Threshold Voltage
4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
9.2ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP10NM60ND to view detailed technical specifications.
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