N-CHANNEL Power MOSFET, TO-220 package, featuring 650V drain-source breakdown voltage and 9A continuous drain current. Offers a low 480mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 3V and a threshold voltage of 3V, with a maximum gate-source voltage of 25V. Includes fast switching characteristics with a 12ns turn-on delay and 50ns turn-off delay. Maximum power dissipation is 90W, with operating temperatures from -55°C to 150°C. This component is RoHS compliant and designed for through-hole mounting.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP10NM65N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
480mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
50ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP10NM65N to view detailed technical specifications.
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