Stmicroelectronics
STP10P6F6
P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220 package
PackageTO-220
MountingThrough Hole
PolarityP-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STP10P6F6 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
340pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
35W
Rds On Max
160mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Turn-Off Delay Time
16.5ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10P6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP10P6F6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.