Stmicroelectronics
STP110N55F6
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP110N55F6 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
5.2mR
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.35nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
5.2mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP110N55F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP110N55F6 to view detailed technical specifications.
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