N-channel MOSFET in a TO-220 package, featuring a 525V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum drain-source on-resistance of 410mR and a threshold voltage of 3.75V. Designed for through-hole mounting with a maximum power dissipation of 125W. Operates within a temperature range of -55°C to 150°C, with a typical input capacitance of 1.4nF.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP11N52K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
510mR
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
410mR
Fall Time
42ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
510mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
281ns
Turn-On Delay Time
7ns
Width
4.6mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STP11N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP11N52K3 to view detailed technical specifications.
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