N-channel MOSFET in a TO-220 package, featuring a 525V drain-source breakdown voltage and 10A continuous drain current. Offers a maximum drain-source on-resistance of 410mR and a threshold voltage of 3.75V. Designed for through-hole mounting with a maximum power dissipation of 125W. Operates within a temperature range of -55°C to 150°C, with a typical input capacitance of 1.4nF.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP11N52K3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 525V |
| Drain to Source Resistance | 510mR |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 410mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 510mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 281ns |
| Turn-On Delay Time | 7ns |
| Width | 4.6mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP11N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP11N52K3 to view detailed technical specifications.
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