N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 9A continuous drain current. This device offers a low 480mΩ typical drain-source on-resistance and is housed in a TO-220 package for through-hole mounting. With a maximum power dissipation of 85W and operating temperatures from -55°C to 150°C, it is suitable for demanding applications. Key electrical characteristics include 25V gate-source voltage and 644pF input capacitance, with turn-on and turn-off delay times of 23ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STP11N65M5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
644pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
85W
Radiation Hardening
No
Rds On Max
480mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
23ns
Turn-On Delay Time
23ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP11N65M5 to view detailed technical specifications.
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